Semiconductor device having Darlington transistors

Details Semiconductor device having Darlington transistors Semiconductor device having Darlington transistors

1989-12-15

1990-07-31

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 34, 357 39, 307315, H01L 2702, H01L 2972, H01L 29747

Patent

active

049453963

ABSTRACT:
A semiconductor device, CHARACTERIZED in that a Darlington transistor in which in one surface of a semiconductor of a first conductivity type, base regions of a second conductivity type, the number of which is larger that the number of base-emitter junctions of the transistor, are formed, emitter regions of the first conductivity type are formed in the base regions, respectively, and base electrodes and emitter electrodes are connected to the base regions and emitter regions, respectively, and are further connected in such a manner that the base electrode of a base region is connected to the emitter electrode in the next base region, is the same in conductivity type arrangement as the transistor and is mounted on the same substrate as the transistor in such a manner that the Darlington transistor is insulated from the transistor, and the base electrode of the transistor is connected to the collector electrode of the Darlington transistor which is formed on the other surface of the semiconductor and to the base electrode of the Darlington transistor which is located at the end of the Darlington transistor and is connected to none of the emitter electrodes of the Darlington transistor, while the emitter electrode of the transistor is connected to the emitter electrode of the Darlington transistor which is located at the end of the Darlington transistor and is connected to none of the base electrodes of the Darlington transistor.

REFERENCES:
patent: 3657577 (1972-04-01), Wakai et al.
patent: 4616144 (1986-10-01), Hideshima et al.
patent: 4695807 (1987-09-01), Annacker et al.
patent: 4769560 (1988-09-01), Tani et al.

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