Semiconductor device having darlington-connected transistor circ

Details Semiconductor device having darlington-connected transistor circ Semiconductor device having darlington-connected transistor circ

1987-02-12

1988-09-06

Miller, Stanley D.

Electrical transmission or interconnection systems

Personnel safety or limit control features

Interlock

307300, 357 46, H03K 333, H03K 1756, H01L 2702

Patent

active

047695609

ABSTRACT:
An additional p-n junction diode, having a forward bias voltage smaller than a forward bias voltage between the base and emitter of a first-stage specific transistor of 3-stage Darlington connected npn transistors, is electrically connected in parallel between a p-type base layer and an n-type collector layer of the specific transistor. The polarities of the p-type and n-type layers of the diode are respectively the same as those of the parallel-connected p-type base and n-type collector layers of the specific transistor.

REFERENCES:
patent: 4482911 (1984-11-01), Quoirin
Transistor-Diodes, "Electronic Data Library-Semiconductors", G. E. Transistor Manual, Chap. 7, Applications, Sec. 7.1.2, pp. 193-198, 1984.

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