Semiconductor device having current spreading layer

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure

Reexamination Certificate

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C257S080000, C257S081000

Reexamination Certificate

active

07834373

ABSTRACT:
A semiconductor device has a current spreading layer between a semiconductor material and an electrode for connecting the semiconductor material to an electrical power supply. The current spreading layer has two or more sub-layers of a first conductive material with patterned regions of a second conductive material distributed between the sub-layers for spreading an electrical current passing between the electrode and the semiconductor material. The second material has an ohmic resistance lower than the first material.

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patent: 2005191326 (2005-07-01), None

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