Semiconductor device having cross wires

Details Semiconductor device having cross wires Semiconductor device having cross wires

1979-01-15

1981-07-14

Larkins, William D.

357 41, 357 71, H01L 2700

Patent

active

042789893

ABSTRACT:
A lower member of a cross wire structure formed in a semiconductor device, such as an MIS type semiconductor memory device, is provided with a structure of at least two layers of an impurity-containing polycrystalline semiconductor material according to the method disclosed. These layers are connected in parallel and their resistance is thus decreased. Furthermore, since these layers may be formed within insulating films over a semiconductor substrate, the degree of integration of the semiconductor device may be enhanced. The method for producing the cross electrodes allows simultaneous fabrication of other semiconductor devices, for instance MIS devices with components commonly fabricated with the cross electrode structures.

REFERENCES:
patent: 3821781 (1974-06-01), Chang et al.
patent: 3964092 (1976-06-01), Wadham
patent: 4012757 (1977-03-01), Koo
patent: 4013489 (1977-03-01), Oldham
patent: 4162506 (1979-07-01), Takei
patent: 4163246 (1979-07-01), Aomura et al.
patent: 4180826 (1979-12-01), Shappir
patent: 4183040 (1980-01-01), Rideout

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