Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1984-08-06
1985-10-15
James, Andrew J.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
357 20, 357 237, 357 2312, 357 41, 357 48, 357 86, 307246, 307279, H01L 2906, H01L 2702, H01L 2704, H01L 2978
Patent
active
045477906
ABSTRACT:
A semiconductor device includes p- and n-type semiconductor layers formed on an insulating substrate and gate electrodes selectively and insulatively formed over the respective p- and n-type semiconductor layers and forming D-type MOS transistors. In this semiconductor device, the p- and n-type semiconductor layers are made in contact with each other, and negative and positive power supply terminals which are respectively set at negative and positive potentials are respectively connected to the p- and n-type semiconductor layers thereby to electrically isolate the p-type and n-type semiconductor layers from each other.
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P. J. Krick, "Complementary MNOS Electronically Alterable Read-Only Memory", IBM Technical Disclosure Bulletin, vol. 13, No. 1, (1970), pp. 263-264.
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Carroll J.
James Andrew J.
Tokyo Shibaura Denki Kabushiki Kaisha
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