Semiconductor device having conductive sidewall structure betwee

Details Semiconductor device having conductive sidewall structure betwee Semiconductor device having conductive sidewall structure betwee

1992-01-23

1993-06-15

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257393, 257659, 257903, H01L 2701, H01L 2904

Patent

active

052201821

ABSTRACT:
A semiconductor device comprising an electrode or wiring layer formed over a semiconductor substrate, a circuit element provided adjacent the electrode or wiring layer, and a conductive layer formed on a side wall, or a side wall and top surface, of the electrode or wiring layer with an insulating film provided therebetween, and supplied with a fixed potential or a variable potential different from a potential on the electrode or wiring layer.

REFERENCES:
patent: 4771323 (1988-09-01), Sasaki
patent: 5060035 (1991-10-01), Nishimura et al.

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