Semiconductor device having conducting layers connected through

Details Semiconductor device having conducting layers connected through Semiconductor device having conducting layers connected through

1993-05-28

1994-10-11

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257668, H01L 2348, H01L 2940

Patent

active

053550234

ABSTRACT:
A part of a polycrystalline silicon film forming a grounding line in a memory cell of a high-resistance load type SRAM, located immediately below a contact hole for connection between a polysilicon power supply line part and an aluminum power supply line part, is separated and isolated from the remaining part of the polycrystalline silicon film to form an island-like part. The contact hole extends through an interlayer insulating film below the aluminum power supply line part, the polysilicon power supply line part and another interlayer insulating film above the island part, and reaches the island part, whereby the aluminum power supply line part contacts even the island part through the contact hole. The island part also contacts the polysilicon power supply line part through another contact hole, whereby low-resistance contact can be obtained between the aluminum and polysilicon power supply line parts through the island part. Since the contact hole can be provided at a position above a grounding line, the area of the cell can be reduced. In this case, even when the contact hole reaches the polycrystalline silicon film of the grounding line due to difficulties in its etching control, undesirable short-circuiting can be avoided between the grounding and power supply lines.

REFERENCES:
patent: 4916521 (1990-04-01), Yoshikawa et al.

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