Patent
1987-03-05
1989-08-01
Edlow, Martin H.
357 13, 357 31, 357 58, 357 52, H01L 29161
Patent
active
048537543
ABSTRACT:
A semiconductor cathode is realized with the aid of a pin structure in which the intrinsic semiconductor region includes a first region with a small band distance and a second region with a large band distance. Consequently, at a sufficient reverse voltage, electrons (6) are generated in the first region (6) which electrons tunnel from the valence band to the conduction band and have a sufficient potential energy to be emitted from the semiconductor body.
REFERENCES:
patent: 3466512 (1969-09-01), Seidel
Van 'T Blik Henri F. J.
Van Gorkom Gerardus G. P.
Biren Steven R.
Edlow Martin H.
U.S. Philips Corp.
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