Semiconductor device having chip size package with improved...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads

Reexamination Certificate

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Details

C257S779000, C257S780000, C257SE23021

Reexamination Certificate

active

07358608

ABSTRACT:
The present invention provides a semiconductor device wherein a passivation film, an insulating film and an encapsulating layer are formed, in this order, on the surface of a semiconductor substrate, which is provided with a electrode pad thereon, and a leading end portion of a bump electrode supported by the insulating film and electrically connected to the electrode pad is exposed from the surface of the encapsulating layer. In the semiconductor device, a slit-shaped opening, which extends along a peripheral edge of the bottom of the bump electrode, is defined in the insulating film.

REFERENCES:
patent: 5291374 (1994-03-01), Hirata et al.
patent: 6287893 (2001-09-01), Elenius et al.
patent: 6518092 (2003-02-01), Kikuchi
patent: 6555415 (2003-04-01), Hedler
patent: O9107048 (1997-04-01), None
patent: 2002-93945 (2002-03-01), None
patent: 2002-093948 (2002-03-01), None
patent: 2002093945 (2002-03-01), None
patent: 2004228236 (2004-08-01), None
patent: WO-9832170 (1998-07-01), None

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