Semiconductor device having character in BPSG film

Details Semiconductor device having character in BPSG film Semiconductor device having character in BPSG film

1996-03-19

1997-09-30

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257634, 257635, 257650, H01L 2358

Patent

active

056729073

ABSTRACT:
A semiconductor device in which the elution quantity of boron and phosphorus from a BPSG film in a process of washing a wafer is controlled low so as to realize sufficient flattening and in which a reflow processing temperature is lowered by increasing concentrations of boron and phosphorus in the BPSG film. A first BPSG film in which the boron concentration is 3.5 wt % to 4.5 wt % and the phosphorus concentration is 5.5 wt % to 6.5 wt % is formed through a polysilicon wiring layer on a semiconductor substrate by a CVD method using an inorganic material source such as SiH.sub.4, B.sub.2 H.sub.6, PH.sub.3, O.sub.2 or an organic material source such as TEOS, TMOP, TMB, or O.sub.3. A gas flow rate is then changed so as to form a second BPSG film having a boron concentration of 2.0 wt % to 3.0 wt % and a phosphorus concentration of 5.5 wt % to 6.5 wt %. Thereafter, the first and the second BPSG films are made floating by reflow processing so as to perform flattening of these films after washing the semiconductor substrate.

REFERENCES:
patent: 5272115 (1993-12-01), Sato

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