Semiconductor device having channel stop regions

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257510, 257316, 257296, H01L 27108, H01L 29788, H01L 2900

Patent

active

061246239

ABSTRACT:
An object of the present invention is to manufacture a semiconductor device excellent in withstand-voltage property of each element formed in a peripheral element region portion, without incurring complexity of a manufacturing process.
Impurity ions are injected into a substrate so as to form a first well portion and field oxide films for partitioning a substrate surface including the surface of the first well portion into a plurality of active regions. Further, the impurity ions are injected into the first well portion so as to form a second well portion having a plurality of active regions. Regions corresponding to the active regions on the second well portion are exposed and a mask for covering regions other than the above regions is formed. Ions are injected into the second well portion exposed from the mask under the action of energy transmitted through the field oxide films.

REFERENCES:
patent: 5373476 (1994-12-01), Jeon
patent: 5407844 (1995-04-01), Smayling et al.
patent: 5411908 (1995-05-01), Santin et al.
patent: 5504708 (1996-04-01), Santin et al.
patent: 5514889 (1996-05-01), Cho et al.
patent: 5604150 (1997-02-01), Mehrad

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device having channel stop regions does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having channel stop regions, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having channel stop regions will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2102433

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.