Semiconductor device having cell plugs

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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Details

C257S300000, C257S384000, C257S768000

Reexamination Certificate

active

06917111

ABSTRACT:
A method for fabricating cell plugs of a semiconductor device with cell plugs is disclosed, which increases the operation speed of the semiconductor device by reducing the cell plug resistance of the device. The semiconductor device includes a first insulating interlayer on a semiconductor substrate; a first cell plug on the semiconductor substrate through the first insulating interlayer; a second insulating interlayer on the first insulating interlayer; a silicide contact on a predetermined surface of the first cell plug through the first insulating interlayer; and a second cell plug on the silicide contact through the second insulating interlayer.

REFERENCES:
patent: 6093615 (2000-07-01), Schuele et al.
patent: 6171970 (2001-01-01), Xing et al.
patent: 6369446 (2002-04-01), Tanaka
patent: 6455424 (2002-09-01), McTeer et al.
patent: 6511879 (2003-01-01), Drynan
patent: 6593638 (2003-07-01), Summerfelt et al.
patent: 0 977 257 (2000-02-01), None

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