Semiconductor device having CCD and its peripheral bipolar trans

Details Semiconductor device having CCD and its peripheral bipolar trans Semiconductor device having CCD and its peripheral bipolar trans

1992-02-18

1994-02-15

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257370, 257372, 257373, 257378, 257400, 257552, 257557, 257565, H01L 2978, H01L 2702, H01L 2972

Patent

active

052869865

ABSTRACT:
In a semiconductor device, a charge transfer device, a bipolar transistor, and a MOSFET are formed on a single chip, and the peripheral portion of the charge transfer device is surrounded by an N.sup.+ -type region. Since the charge transfer device block is surrounded by the N.sup.+ -type region and the N.sup.+ -type buried layer, leaked charge of clocks from the charge transfer device is absorbed by the N.sup.+ -type region and the N.sup.+ -type buried layer.

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