Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-02-19
1999-03-16
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257763, 257758, H01L 2348, H01L 2352, H01L 2940
Patent
active
058834346
ABSTRACT:
In a semiconductor device including a first insulating layer formed on a semiconductor substrate, a plurality of lower wiring layers made of one of aluminum and aluminum alloy and formed on the first insulating layer, a second insulating layer made of one of silicon oxide and PSG and formed on the first insulating layer, and a plurality of upper wiring layers made of one of aluminum and aluminum alloy, contact holes having a size larger than a width of the lower wiring layers are formed within the second insulating layer, and contact plugs are filled in the contact holes. Also, a conductive layer including one of Ti and W is provided between the lower wiring layers and the contact plugs.
REFERENCES:
patent: 4489482 (1984-12-01), Keyser et al.
patent: 4626479 (1986-12-01), Hosoi et al.
patent: 4873565 (1989-10-01), Roane
patent: 4916521 (1990-04-01), Yoshikawa et al.
patent: 5132775 (1992-07-01), Brighton et al.
patent: 5561327 (1996-10-01), Jun
patent: 5592024 (1997-01-01), Aoyama et al.
Cao Phat X.
Chaudhuri Olik
NEC Corporation
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