Semiconductor device having capacitor formed in multilayer...

Details Semiconductor device having capacitor formed in multilayer... Semiconductor device having capacitor formed in multilayer...

2007-07-10

2007-07-10

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S306000, C257S774000, C257S027000, C257S027000

Reexamination Certificate

active

10626592

ABSTRACT:
A semiconductor device having a capacitor formed in a multilayer wiring structure, the semiconductor device comprising a multilayer wiring structure including a plurality of wiring layers formed on a substrate, a capacitor arranged in a predetermined wiring layer in the multilayer wiring structure and having a lower electrode, a dielectric film, and an upper electrode, a first via formed in the predetermined wiring layer and connected to a top surface of the upper electrode of the capacitor, and a second via formed in an overlying wiring layer stacked on the predetermined wiring layer, the second via being formed on the first via.

REFERENCES:
patent: 5986299 (1999-11-01), Nakamura et al.
patent: 6130449 (2000-10-01), Matsuoka et al.
patent: 6294834 (2001-09-01), Yeh et al.
patent: 6313003 (2001-11-01), Chen
patent: 6316801 (2001-11-01), Amanuma
patent: 6342734 (2002-01-01), Allman et al.
patent: 6417092 (2002-07-01), Jain et al.
patent: 6504202 (2003-01-01), Allman et al.
patent: 6534809 (2003-03-01), Moise et al.
patent: 6603203 (2003-08-01), Amanuma
patent: 6639263 (2003-10-01), Kumagai et al.
patent: 6657247 (2003-12-01), Yoshiyama et al.
patent: 6734477 (2004-05-01), Moise et al.
patent: 6740974 (2004-05-01), Yoshitomi
patent: 6794694 (2004-09-01), Diodato et al.
patent: 6916722 (2005-07-01), Huang et al.
patent: 2001/0025973 (2001-10-01), Yamada et al.
patent: 2002/0153554 (2002-10-01), Kajita et al.
patent: 2003/0173669 (2003-09-01), Shau
patent: 2004/0197991 (2004-10-01), Lee et al.
patent: 1315745 (2001-10-01), None
patent: 2001-274340 (2001-10-01), None
patent: 2002-270769 (2002-09-01), None
U.S. Appl. No. 10/626,592, filed Jul. 25, 2003, Matsunaga et al.
U.S. Appl. No. 10/793,796, filed Mar. 8, 2004, Nakashima.

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