Semiconductor device having cap-metal layer

Details Semiconductor device having cap-metal layer Semiconductor device having cap-metal layer

1994-03-21

1997-06-03

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257764, 257765, 257770, H01L 2348

Patent

active

056357630

ABSTRACT:
A semiconductor device is disclosed, which includes an insulating layer and an interconnection layer having a conductive layer provided over the insulating layer. The interconnection layer is patterned by photolithography. The device further includes a cap-metal layer, which is deposited on the conductive layer and suppresses reflection of light beams at the time of patterning the interconnection layer. The cap-metal layer has any one of the following structures: a double-layered structure having a titanium nitride layer and a titanium layer located between the titanium nitride layer and the conductive layer; a double-layered structure having a titanium nitride layer and an aluminum-titanium alloy layer located between the titanium nitride layer and the conductive layer; and a single-layered structure consisting essentially of an aluminum-titanium alloy. These design ensure accurate interconnection patterning in the photolithography, and provide improved EM and SM immunities of the interconnection.

REFERENCES:
patent: 5124779 (1992-06-01), Furukawa et al.
patent: 5317187 (1994-05-01), Hindman et al.
patent: 5341026 (1994-08-01), Harada et al.
patent: 5360995 (1994-11-01), Craas
patent: 5459353 (1995-10-01), Kanazawa
patent: 5475267 (1995-12-01), Ishii et al.
Inoue et al., "Behavior of TiN and Ti Barrier Metals on Al-Barrier-Al Via Hole Metallization", pp. 65-72, 1993, Technical Report of IEICE, Jun.
Inoue et al., "Reaction at the Via Contact Interface in Double-Level-Aluminum Interconnection", pp. 59-66, 1993, Technical Report of IEICE, Aug.
Inoue, et al., "Effect of TiN/Ti Cap Layers On Electromigaration Performance or Al Based Multi-Layered Interconnects", pp. 67-74, 1994, Technical Report of IEICE, Jan.
Inoue et al., "Behavior of TiN and Ti Barrier Metals in Al-Barrier-Al Via Hole Metallization", J. Electrochem. Soc., vol. 141, No. 4, Apr., 1994.

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