Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond
Reexamination Certificate
2006-07-28
2008-07-01
Williams, Alexander O (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Wire contact, lead, or bond
C257SE23069, C257SE23020, C257S786000, C257S737000, C257S775000, C257S774000, C257S773000, C257S780000, C257S782000, C257S690000, C257S691000, C257S692000, C257S693000, C257S048000, C257S778000
Reexamination Certificate
active
07394164
ABSTRACT:
A semiconductor device has a plurality of bumps in a same row for staggered probing. The bumps in a same row are disposed on a chip and include a plurality of regular bumps and a plurality of irregular bumps. The regular bumps and the irregular bumps are interspersed in a same pitch. Along a defined line, the widths of the irregular bumps are narrower than the ones of the regular bumps for fine pitch applications. Additionally, the irregular bumps have a plurality of integral probed portions far away the line, top surfaces of which are expanded such that probed points can be defined on the probed portions for staggered probing.
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Peng Bing-Yen
Shih Ho-Cheng
Ultra Chip, Inc.
Williams Alexander O
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