Semiconductor device having bridge-connected wiring structure

Details Semiconductor device having bridge-connected wiring structure Semiconductor device having bridge-connected wiring structure

2005-09-13

2005-09-13

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For plural devices

C257S723000, C257S725000

Reexamination Certificate

active

06943445

ABSTRACT:
The present invention provides a semiconductor device which reduces an inductance of wiring for bridge-connecting semiconductor switches and realizes a reduction in size. Within the semiconductor device formed are two controllable bridge-connected semiconductor switches13aand13b, an output terminal, positive
egative polarity DC terminals2and3, and an insulating substrate15ain which conductor layers12, 17and19having a conductor section and in an inner layer for bridge-connecting the semiconductor switches to the DC terminals on a surface thereof and insulating layers16and18are alternately laminated. The surface and inner-layer conductor layers12and17which interpose the insulating layer16therebetween are electrically connected by a conductor20passing through the insulating layer16interposed between the conductor layers12and17. A current path (dotted line) is so provided as to allow current flowing through a bridge circuit for mounting the two semiconductor switches on the insulating substrate to flow in opposite directions between the conductor layers12and17which interpose the insulating layer16therebetween.

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patent: 11-145376 (1999-05-01), None

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