Semiconductor device having bonding pads extending over active r

Details Semiconductor device having bonding pads extending over active r Semiconductor device having bonding pads extending over active r

1971-04-28

1976-08-03

James, Andrew J.

357 35, 357 65, 357 67, 357 68, H01L 2348, H01L 2972, H01L 2946, H01L 2962

Patent

active

039732711

ABSTRACT:
A high-frequency transistor of planar structure having emitter and base regions of extremely fine structure to reduce the junction capacity. For the wire bond connection between said emitter or base region and an external lead wire, the transistor has the aluminium electrodes which swell and extend on the insulating film.

REFERENCES:
patent: 3191070 (1965-06-01), Jones et al.
patent: 3204321 (1965-09-01), Kile
patent: 3237271 (1966-03-01), Arnold et al.
patent: 3287610 (1966-11-01), Reber
patent: 3290570 (1964-12-01), Cunningham
patent: 3361592 (1968-02-01), Quetsch, Jr. et al.
patent: 3363150 (1968-01-01), Whitman et al.
patent: 3373323 (1968-03-01), Wolfrum et al.
patent: 3390025 (1968-06-01), Strieter
patent: 3431468 (1969-03-01), Huffman
patent: 3443173 (1969-05-01), Tsang et al.
patent: 3457631 (1969-07-01), Hall et al.
patent: 3462349 (1969-08-01), Gorgenyi
patent: 3471755 (1969-10-01), Bilotti
patent: 3473979 (1969-10-01), Haenichen
patent: 3483440 (1969-12-01), Dulin
patent: 3489964 (1970-01-01), Masuda
patent: 3496427 (1970-02-01), Lee

Affiliated with

Also associated with

Rating

Semiconductor device having bonding pads extending over active r does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having bonding pads extending over active r, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having bonding pads extending over active r will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1932982