Semiconductor device having bonding pad of the first chip...

Details Semiconductor device having bonding pad of the first chip... Semiconductor device having bonding pad of the first chip...

2007-08-14

2007-08-14

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Multiple housings

C257S777000

Reexamination Certificate

active

11350889

ABSTRACT:
To provide a semiconductor device that enables high integration degree, and a manufacturing method therefor. A multi-chip module according to an embodiment of the present invention includes: a first semiconductor chip having a first bonding pad; a second semiconductor chip having a second bonding pad thinner than the first bonding pad; and a bonding wire connected with each of the first bonding pad and the second bonding pad, the first bonding pad being connected with a first bond side end portion of the bonding wire and the second bonding pad being connected with a second bond side end portion of the bonding wire.

REFERENCES:
patent: 5245215 (1993-09-01), Sawaya
patent: 2000-68316 (2000-03-01), None
patent: 2000-114452 (2000-04-01), None
patent: 2003-273314 (2003-09-01), None

Affiliated with

Also associated with

Rating

Semiconductor device having bonding pad of the first chip... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having bonding pad of the first chip..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having bonding pad of the first chip... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3897390