Semiconductor device having bonding optional circuit

Details Semiconductor device having bonding optional circuit Semiconductor device having bonding optional circuit

1993-06-10

1995-05-02

Wambach, Margaret Rose

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Particular stable state circuit

327391, 327544, H03K 301

Patent

active

054123330

ABSTRACT:
The power consumption of a semiconductor device capable of performing any one of a plurality of functions selectively according to whether a predetermined bonding pad thereof is bonded to a power source line or a ground line is reduced during an idle time. The potential of the bonding pad when the latter is in a floating state is driven to a certain level by a current flowing through a P-type MOS transistor having a relatively large driving capability during a predetermined time from initial application of a power supply voltage to the semiconductor device. Thereafter, the bonding pad is biased by a P type MOS transistor having a relatively smaller driving capability.

REFERENCES:
patent: 4985641 (1991-01-01), Nagayama et al.

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