Semiconductor device having bipolar transistors with commonly in

Details Semiconductor device having bipolar transistors with commonly in Semiconductor device having bipolar transistors with commonly in

1994-10-28

1996-09-03

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257566, 257508, 257526, H01L 29732

Patent

active

055526268

ABSTRACT:
A semiconductor device with bipolar transistors formed in respective island regions in which collector regions of the bipolar transistors do not need to be pulled up to the top of the corresponding island regions and do not need to be contacted with a collector electrode on the top of the corresponding island regions. First and second semiconductor island regions are formed to be buried in a second insulator formed on a first insulator. First and second bipolar transistors are provided in the first and second island regions, respectively. An interconnection conductor for electrically interconnecting collector regions of the first and second transistors is formed in the second insulator and in contact with the collector regions of the first and second transistors. A common collector electrode formed on a third insulator covering the first and second island regions is electrically connected with the collector regions of the first and second transistors through the interconnection conductor, respectively.

REFERENCES:
patent: 4338622 (1982-07-01), Fent et al.
patent: 4492008 (1985-01-01), Anantha et al.
patent: 4982262 (1991-01-01), Hartman et al.
patent: 5345102 (1994-09-01), Matsumoto
"Integrated Complementary HBT Microwave Push-Pull and Darlington Amplifiers with p-n-p Active Loads", by K. Kobayashi et al., IEEE Jrnl. of Solid-State Cir., vol. 28, No. 10, Oct. 93, pp. 1011-1017.
"An NPN 30 GHZ, PNP 32 GHz F.sub.T Complementary Bipolar Technology", by T. Onai et al., 1993 IEEE, IEDM 93-66.

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