Semiconductor device having bipolar transistor with unique ratio

Details Semiconductor device having bipolar transistor with unique ratio Semiconductor device having bipolar transistor with unique ratio

1997-10-22

1999-03-23

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With means to increase inverse gain

257587, 257588, 438322, H01L 27082, H01L 27102, H01L 2970, H01L 3111

Patent

active

058863958

ABSTRACT:
To obtain both the highest possible maximum operating frequency f.sub.max and early voltage V.sub.A, a semiconductor device provided with a bipolar transistor including a collector region, a base region formed on the collector region, an emitter region formed in contact with the base region, a base leading electrode connected to the base region, and an emitter electrode connected to the emitter region, is characterized in that a ratio Q.sub.B /N.sub.c of base Gunmel number Q.sub.B to impurity concentration N.sub.C of the collector region of the bipolar transistor lies within a range from 0.2.times.10.sup.-3 cm to 2.5.times..sup.-3 cm.

REFERENCES:
patent: 4578633 (1986-03-01), Aoki
patent: 4837176 (1989-06-01), Zdebel et al.
patent: 4897704 (1990-01-01), Sakurai
patent: 5481132 (1996-01-01), Moreau
patent: 5656514 (1997-08-01), Ahlgren et al.
Stanley Wolf Ph.D., Silicon Processing for the VLSI Era (vol. 2: Process Integration), Chapter 7: Bipolar and BICMOS Process Integration (Section 7.3.1: Current Gain), p. 465, 1990.
Meister et al, "Selective Epitaxial Bipolar Technology for 25 to 40 Gb/s ICs", T:SS-DERC, 1993, pp. 203-210.
Crabbe et al, "Vertical Profile Optimization of Very High Frequency Epitaxial Si-and SiGe-Base Bipolar Transistors", 1993 IEEE, IEDM 93-83, pp. 4.6.1 -4.6.4.

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