Semiconductor device having bipolar transistor free from leakage

Details Semiconductor device having bipolar transistor free from leakage Semiconductor device having bipolar transistor free from leakage

1995-09-12

1997-12-16

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With base region having specified doping concentration...

257588, H01L 27082, H01L 27102

Patent

active

056988907

ABSTRACT:
A bipolar transistor includes a base structure in a hollow space on a single crystal silicon collector region defined by a silicon oxide layer, and the base structure has an extrinsic base provided around a single crystal silicon emitter region and an intrinsic base layer of single crystal silicon germanium decreasing the thickness from a central portion toward an outer periphery so as to decrease dislocation due to thermal stress in a heat treatment for the emitter region.

REFERENCES:
patent: 5296391 (1994-03-01), Sato et al.
patent: 5321301 (1994-06-01), Sato et al.
patent: 5323032 (1994-06-01), Sato et al.
Sato et al; "A Self-Aligned Selective MBE Technology for High-Performance Bipolar Transistors"; Dec. 9-12, 1990; pp. 607-610; International Electron Devices Meeting 1990.
Sato et al; "Sub-20psec ECL Circuits with 50GHz fmax Self-Aligned SiGe HBTs"; 1992; pp. 397-400; International Electron Devices Meeting Technical Digest.
"Sub-20psec ECL Circuits with 50GHz fmax Self-aligned SiGe HBTs" Sato et al; International Electron Devices Meeting; 1992, IEEE; pp. 15.2.1-15.2.4.

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