Semiconductor device having balanced circuit for use in high...

Amplifiers – With semiconductor amplifying device – Including frequency-responsive means in the signal...

Reexamination Certificate

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C330S286000, C330S295000, C330S301000

Reexamination Certificate

active

07061329

ABSTRACT:
A semiconductor chip for amplification is connected between input-side and output-side matching circuits, and each of matching circuits includes balanced circuits which receive signals different in phase by 180 degrees, divided from an input signal. The balanced circuits are connected at a virtual grounding point, which is used as a grounding point sensitive to RF characteristics in an IPD. Thus, a semiconductor device can be free from influence of variations of grounding wires and can be reduced in size, weight, and cost.

REFERENCES:
patent: 4549152 (1985-10-01), Kumar
patent: 4588962 (1986-05-01), Saito et al.
patent: 5017886 (1991-05-01), Geller
patent: 5053719 (1991-10-01), Tsai
patent: 6097250 (2000-08-01), Kamali et al.
patent: 6-6151 (1994-01-01), None
patent: 7-263634 (1995-10-01), None
K. Inoue, “A 240 W Push-Pull GaAs Power FET for W-CDMA Base Stations”, 2000IEEE, pp. 1-4,Fujitsu Quantum Devices Ltd.,Japan.

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