Amplifiers – With semiconductor amplifying device – Including frequency-responsive means in the signal...
Reexamination Certificate
2006-06-13
2006-06-13
Nguyen, Khanh Van (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including frequency-responsive means in the signal...
C330S286000, C330S295000, C330S301000
Reexamination Certificate
active
07061329
ABSTRACT:
A semiconductor chip for amplification is connected between input-side and output-side matching circuits, and each of matching circuits includes balanced circuits which receive signals different in phase by 180 degrees, divided from an input signal. The balanced circuits are connected at a virtual grounding point, which is used as a grounding point sensitive to RF characteristics in an IPD. Thus, a semiconductor device can be free from influence of variations of grounding wires and can be reduced in size, weight, and cost.
REFERENCES:
patent: 4549152 (1985-10-01), Kumar
patent: 4588962 (1986-05-01), Saito et al.
patent: 5017886 (1991-05-01), Geller
patent: 5053719 (1991-10-01), Tsai
patent: 6097250 (2000-08-01), Kamali et al.
patent: 6-6151 (1994-01-01), None
patent: 7-263634 (1995-10-01), None
K. Inoue, “A 240 W Push-Pull GaAs Power FET for W-CDMA Base Stations”, 2000IEEE, pp. 1-4,Fujitsu Quantum Devices Ltd.,Japan.
Goto Seiki
Inoue Akira
Ohta Akira
Leydig , Voit & Mayer, Ltd.
Mitsubishi Denki & Kabushiki Kaisha
Nguyen Khanh Van
LandOfFree
Semiconductor device having balanced circuit for use in high... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having balanced circuit for use in high..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having balanced circuit for use in high... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3657758