Semiconductor device having at least three power terminals...

Details Semiconductor device having at least three power terminals... Semiconductor device having at least three power terminals...

2005-04-26

2005-04-26

Cuneo, Kamand (Department: 2827)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C257S690000, C257S724000, C257S666000, C257S734000

Reexamination Certificate

active

06885096

ABSTRACT:
The present has an object of reducing a wiring resistance caused by the wiring metal such as bonding wire, and self-inductance, in a semiconductor device for large power, such as IGBT module. Therefore, the invention has at lest three or more power terminals superimposed on each other, wherein at least one semiconductor chip is connected electrically in a way to be sandwiched between predetermined two power terminals among the power terminals. A power terminal on one end among the aforementioned superposed power terminals and a power terminal on the other end among the superposed power terminals can be led out in the same direction, for example.

REFERENCES:
patent: 4426689 (1984-01-01), Henle et al.
patent: 4454529 (1984-06-01), Philofsky et al.
patent: 5408128 (1995-04-01), Furnival
patent: 5828125 (1998-10-01), Burns
patent: 6083772 (2000-07-01), Bowman et al.
patent: 6208521 (2001-03-01), Nakatsuka
patent: 0588094 (1994-03-01), None
patent: 406188335 (1994-07-01), None
patent: 07-202072 (1995-08-01), None
patent: 11-17087 (1999-01-01), None
patent: 11-163045 (1999-06-01), None
patent: 6-151685 (1994-05-01), None

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