Semiconductor device having antireflective layer containing orga

Details Semiconductor device having antireflective layer containing orga Semiconductor device having antireflective layer containing orga

1997-03-21

1998-04-28

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Radiation sensitive product

Antihalation or filter layer containing

4302711, 430510, G03F 711, G03C 1825

Patent

active

057442932

ABSTRACT:
This invention relates to an antireflective layer (ARL) which has both good absorption capability and low reflectivity at the photoresist/ARL interface. The ARL also significantly reduces CD variation in exposed photoresist film. The ARL of the present invention comprises an organic base resin having fine carbon particles dispersed therein. The combination of the organic base resin and fine carbon particles provide both good absorption and low reflectivity.
The present invention is also related to a process of forming a semiconductor by applying an antireflection layer to the surface of a substrate, forming a photoresist layer on the antireflection layer, and selectively exposing the substrate to ultraviolet light, wherein the antireflective layer is an organic resin having carbon particles dispersed therein.

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