Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device
Reexamination Certificate
2007-12-25
2007-12-25
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For high frequency device
C257SE23064, C257S693000, C257S690000, C257S664000, C257S700000, C257S701000, C257S528000, C257S532000, C257S784000, C343S7000MS, C343S895000, C343S702000, C343S873000
Reexamination Certificate
active
10778234
ABSTRACT:
A semiconductor device includes first and second antenna connection electrodes placed on the periphery of a semiconductor chip, an on-chip antenna connection electrode placed in the inner area of the semiconductor chip compared to the first and second antenna connection electrodes, and an internal circuit formed in the semiconductor chip. The first and second antenna connection electrodes are connected to the internal circuit by internal lines. The on-chip antenna connection electrode is connected to the internal circuit and the second antenna connection electrode by internal lines. An on-chip antenna is connected to the second antenna connection electrode and the on-chip antenna connection electrode. An external antenna is connected to the first and second antenna connection electrodes.
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Daido Kazuhiko
Nakayama Osamu
Shiratsuchi Osamu
Watanabe Hiroto
Hitachi Maxell Ltd.
Williams Alexander Oscar
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