Semiconductor device having an oxide defined aperture

Details Semiconductor device having an oxide defined aperture Semiconductor device having an oxide defined aperture

1998-01-28

2000-06-13

Arroyo, Teresa M.

Coherent light generators

Particular resonant cavity

Distributed feedback

372 46, H01S 319, H01S 308

Patent

active

06075804&

ABSTRACT:
An improved aperture is provided. The aperture comprises: at least a first layer; the first layer being oxidized in a laterally oriented first region; the first layer being modified within a laterally oriented second region, the second region being oxidized less than the first region; a second layer disposed above the first layer, the second layer being oxidized less than the first layer and providing material to modify the laterally oriented second region and thereby define an aperture. Additionally, a method for producing the aperture is disclosed.

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