Semiconductor device having an ohmic electrode on a p-type III-V

Details Semiconductor device having an ohmic electrode on a p-type III-V Semiconductor device having an ohmic electrode on a p-type III-V

1989-01-23

1990-04-03

Hille, Rolf

357 71, H01L 2354

Patent

active

049144995

ABSTRACT:
A semiconductor device having an ohmic electrode which has formed on the surface of a p-type III-V compound semiconductor an assembly of a first Ti layer, a second Zn layer, a third metal layer made of one element selected from among Pt, Mo, W and Cr, and a fourth Au layer is disclosed. A process for producing such semiconductor device is also disclosed.
The present invention provides a novel ohmic electrode having a low contact resistance comparable to that of a conventional electrode formed by deposition of successive Au, An and Au layers. The novel electrode also has the advantage of another conventional electrode wherein the Au electromigration is held to a minimum by forming an assembly of a Ti layer, a metal layer made of an element selected from among Pt, Mo, W and Cr, and an Au layer.

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Piotrowska, A., Guivarc'H, A. and Pelous, G., Solid-State Electronics, vol. 26, No. 3, pp. 179-197, Jan., 1982 "Ohmic Contacts to III-V Compound Semicondutors: A Review of Fabrication Techniques."
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