Semiconductor device having an isolation layer region on the sid

Details Semiconductor device having an isolation layer region on the sid Semiconductor device having an isolation layer region on the sid

1992-11-19

1994-03-08

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

Groove

257618, 257506, 257509, 257510, H01L 2906, H01L 2900

Patent

active

052930610

ABSTRACT:
Steps or grooves are formed in a surface of a semiconductor substrate of a semiconductor device having a plurality of semiconductor elements, and an isolation layer is formed on regions that include the steps or side walls of the grooves.

REFERENCES:
patent: 3961358 (1976-06-01), Polinsky
patent: 4689871 (1987-09-01), Malhi
patent: 4926231 (1990-05-01), Hwang et al.
patent: 4947227 (1990-08-01), Teng
patent: 4975759 (1990-12-01), Sidner et al.
patent: 5013676 (1991-05-01), Horigome

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