Semiconductor device having an isolation layer and two passivati

Details Semiconductor device having an isolation layer and two passivati Semiconductor device having an isolation layer and two passivati

1996-10-28

1998-08-25

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257496, 257510, 257526, 257638, 257640, 257642, 257643, 257649, H01L 2358, H01L 2900

Patent

active

057985626

ABSTRACT:
The invention relates to a semiconductor device with a substrate, with at least one isolation layer with at least one window, with a passivation layer scheme lying on the isolation layer and a metallization lying on the passivation layer scheme, the latter comprising at least two dielectric layers of which the first dielectric layer covers the isolation layer with its edges as well as the substrate in an outer edge zone of the window, and of which the second dielectric layer covers the first dielectric layer also over the edge of the isolation layer and in a portion of the outer region of the window.

REFERENCES:
patent: 3985597 (1976-10-01), Zielinski
patent: 4001870 (1977-01-01), Saiki et al.
patent: 4091406 (1978-05-01), Lewis
patent: 4328262 (1982-05-01), Kurahashi et al.
patent: 4440580 (1984-04-01), Gahle
patent: 4477965 (1984-10-01), Blossfeld
patent: 4600624 (1986-07-01), Joseph et al.
patent: 4601939 (1986-07-01), Gati et al.
patent: 4618878 (1986-10-01), Aoyama et al.
patent: 4733289 (1988-03-01), Tsurumaru
patent: 4778774 (1988-10-01), Blossfeld
patent: 4786610 (1988-11-01), Blossfeld
patent: 5013674 (1991-05-01), Bergemont
patent: 5016069 (1991-05-01), Bergemont
patent: 5055906 (1991-10-01), Mase et al.
patent: 5366911 (1994-11-01), Lur et al.
patent: 5384271 (1995-01-01), Kwasnick et al.
patent: 5523616 (1996-06-01), Den
patent: 5616960 (1997-04-01), Noda et al.
patent: 5619064 (1997-04-01), Cho

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