Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Patent
1995-06-07
1996-02-13
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
257500, 257528, 257372, 257355, H01L 29784
Patent
active
054913586
ABSTRACT:
In a semiconductor device having a digital circuit region and an analog circuit region formed on an N type semiconductor substrate, a P type well region is formed on the semiconductor substrate and between the digital circuit region and the analog circuit region. Furthermore, an N type first diffusion layer is formed on the well region. In the semiconductor device, the isolating portion formed between the digital and analog circuit regions not only shuts off an electrical noise between the regions but also absorbs an electrostatic surge input from an external device to a power source terminal, thereby protecting the digital and analog circuit regions from electrostatic breakdown.
REFERENCES:
patent: 4847724 (1989-07-01), Renous
patent: 5065212 (1991-11-01), Ohata et al.
patent: 5220190 (1993-06-01), Taguchi et al.
patent: 5239197 (1993-08-01), Yamamoto
patent: 5336915 (1994-08-01), Fujita et al.
Kabushiki Kaisha Toshiba
Limanek Robert P.
Williams Alexander Oscar
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