Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure
Patent
1991-10-03
1993-03-16
LaRoche, Eugene R.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
437 31, 437 26, 437 32, 257587, 257588, H01L 21263, H01L 21265, H01L 2972
Patent
active
051949261
ABSTRACT:
A bipolar transistor having an inverse-T emitter electrode is formed in a semiconductor device (10) to reduce hot carrier injection (HCI) damage under reverse-biasing conditions and to increase emitter-base breakdown voltages. The bipolar transistor includes an emitter electrode having a central body portion (26) and shelf portions (38). Beneath the emitter electrode is an emitter region (30) and an active base region (25). Extrinsic base regions (35 and 36) are self-aligned to the shelf edges and are linked to the ative base region by link regions (27 and 28). Having the emitter-base junction beneath the shelf portions, and therefore under direct control of the emitter electrode, decreases the electrical field at the junction, which lessens HCI damage and improves breakdown characteristics. The inverse-T emitter electrode also eliminates the need to etch a polysilicon emitter electrode selective to an underlying silicon substrate.
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"Single Polysilicon Layer Advanced Super High-Speed BiCMOS Technology," by J. L. de Jong et al. Proceedings of the 1989 Bipolar Circuits and Technology Meeting, Sponsored by IEEE, Sep. 18-19, 1989, Minneapolis, Minn., Paper 7.4, pp. 182-185.
Goddard Patricia S.
LaRoche Eugene R.
Motorola Inc.
Nguyen Viet Q.
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