Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1996-10-23
1998-06-30
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257499, 257536, H01L 2992
Patent
active
057738726
ABSTRACT:
Capacitors C1 and C2, as insulation layer separated elements forming an element pair of a differential circuit, have a common independent N well formed independently of an N well connected to a power source VDD. Since the independent N well is in floating condition, even when high level spike noise generated upon switching of CMOS or so forth is superimposed on the power source VDD, the high level spike noise is not directly transmitted to the independent N well, making fluctuation of bias potential of the independent N well small. Therefore, a potential difference in the independent N well due to impedance resistance in the independent N well becomes small.
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Hardy David B.
NEC Corporation
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