Semiconductor device having an integrated circuit formed on a co

Details Semiconductor device having an integrated circuit formed on a co Semiconductor device having an integrated circuit formed on a co

1988-07-08

1990-01-23

James, Andrew J.

Wave transmission lines and networks

Automatically controlled systems

With control of equalizer and/or delay network

357 60, 357 61, 357 55, 357 4, 333246, H01L 29267, H01L 2906

Patent

active

048961949

ABSTRACT:
A semiconductor device includes a Si substrate, a compound semiconductor layer selectively formed on one main surface of the Si substrate, a hole formed in the Si substrate to expose a portion of a back surface of the compound semiconductor layer, a microwave monolithic integrated circuit formed on a portion of an upper surface of the compound semiconductor layer just above the exposed portion of the back surface, and a metal layer covering the back surface of the Si substrate, the side walls of the hole and the exposed portion of the back surface of the compound semiconductor layer. A Si device may be formed on the portion of the upper surface of the Si substrate where the compound semiconductor layer is not formed. GaAs may be used for the compound semiconductor layer and the metal layer is connected to the ground line.

REFERENCES:
patent: 4551394 (1985-11-01), Betsch
patent: 4706100 (1987-11-01), Tufte
patent: 4739389 (1988-04-01), Grodbloed
patent: 4772929 (1988-09-01), Manchester
patent: 4774205 (1988-09-01), Choi
R. Fischer, T. Henderson, J. Klem, W. Kopp, C. K. Peng, H. Morkoc, J. Detry and S. C. Blackstone, "Monolithic Integration of GaAs Modulation-Doped Field Effect Transistors and N-Metal-Oxide-Semiconductor Silicon Circuits", Appl. Physics Letter 47, Nov. 1, 1985, pp. 983-985.
M. Eron, G. Taylor, R. Menna, S. Y. Narayan, and J. Klatskin, "X-Band MMIC Amplifier on GaAs/Si", IEEE Electron Device Letters, vol. EDL.-8, No. 8, Aug. 1987, pp. 350-352.
R. J. Fischer, W. F. Kopp, J. S. Gedymin, and H. Morkoc, "Properties of MODFET's Grown on Substrates at DC and Microwave Frequencies", IEEE Transactions on Electron Devices, vol. ED-33, No. 10, Oct. 1986, pp. 1407 to 1412.

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