Semiconductor device having an insulator including an...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With polycrystalline semiconductor isolation region in...

Reexamination Certificate

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C257S506000, C257SE29018

Reexamination Certificate

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07923807

ABSTRACT:
A semiconductor device comprises a semiconductor substrate of the first conductivity type. A well layer of the first conductivity type is selectively formed on the semiconductor substrate. A first diffused layer of the second conductivity type is selectively formed on the well layer. A second diffused layer of the second conductivity type is formed on the well layer apart from the first diffused layer. A control electrode is formed on an insulating film between the first diffused layer and the second diffused layer. A main electrode is formed on each of the first diffused layer and the second diffused layer. A first trench is formed in the semiconductor substrate surrounding the well layer. A third diffused layer of the second conductivity type is formed contacting to the first trench. The second diffused layer and the third diffused layer are electrically kept at the same potential.

REFERENCES:
patent: 6690212 (2004-02-01), Yamamoto
patent: 6803626 (2004-10-01), Sapp et al.
patent: 6828651 (2004-12-01), Erratico
patent: 6831331 (2004-12-01), Kitamura et al.
patent: 2004/0227206 (2004-11-01), Oyamatsu
patent: 2007/0045767 (2007-03-01), Zhu et al.
patent: 2001-77682 (2001-03-01), None

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