Semiconductor device having an insulation film of low permittivi

Details Semiconductor device having an insulation film of low permittivi Semiconductor device having an insulation film of low permittivi

1997-05-29

1999-05-18

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257295, 257310, 257410, 257637, H01L23/58

Patent

active

059052988

ABSTRACT:
An insulation structure is formed in a high-density plasma environment by depositing a first SiO.sub.2 film containing a substantial amount of F without a substrate bias, followed by depositing a second SiO.sub.2 film containing a reduced amount of F with a substantial substrate bias, and further followed by depositing a third SiO.sub.2 film containing a substantial amount of F without a substrate bias.

REFERENCES:
patent: 5457073 (1995-10-01), Ouellet
patent: 5607773 (1997-03-01), Ahlburn et al.
patent: 5719416 (1998-02-01), Yoshimori et al.

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