Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1992-07-01
1994-08-09
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 73, 257452, 257483, 359 60, 359 62, H01L 2948, G02F 11343
Patent
active
053369050
ABSTRACT:
Semiconductor device and method of manufacturing same, display device and support plate for same provided with such a semiconductor device. A semiconductor device having an insulating substrate on which a Schottky diode is formed between a metal layer and a semiconductor layer of polycrystalline or amorphous silicon extending over the metal layer is used inter alia in matrix display devices, such as LCDs. The Schottky diode forms part of a switching element of such a device and must have a low reverse current up to a reverse voltage of, for example, approximately 10 V. The known semiconductor device having Schottky diodes, in which the semiconductor material extends over a lateral surface of the Schottky metal, is found not to comply with this requirement. To overcome this deficiency a low leakage current is realized over a wide reverse voltage range due to the presence of a dielectric on the lateral surface of the Schottky metal. The dielectric suppresses the leakage current issuing from the lateral surface. Preferably, the dielectric includes an oxide of the Schottky metal. This may be readily formed through local oxidation, for example, by means of an oxygen plasma.
REFERENCES:
patent: 4952984 (1990-08-01), Martens et al.
Bosman Antonie J.
Huisman Frederikus R. J.
van Dijk Richard C.
Vink Teunis J.
Biren Steven R.
U.S. Philips Corporation
Wojciechowicz Edward
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