Semiconductor device having an insulated gate type field effect

Details Semiconductor device having an insulated gate type field effect Semiconductor device having an insulated gate type field effect

1978-09-15

1981-05-19

Wojciechowicz, Edward J.

357 23, 357 41, 357 45, 357 49, 357 50, 357 55, H01L 2934

Patent

active

042688477

ABSTRACT:
An insulated gate type field effect transistor forming one cell of a high density integrated circuit semiconductor memory device and a method for producing the same are disclosed. A channel stopper region of the same conductivity type as the substrate but having a higher impurity concentration is disposed contiguous to the width edge of the channel region, and a thick field oxide film is provided outside of the channel stopper region. The channel stopper region is self-aligned with the width edges of the gate electrode, and an insulator film having a thinner film thickness than that of the thick field oxide film is formed on the channel stopper region. In one embodiment, a second channel stopper region similar to the first is provided at the surface of the substrate under the field oxide film. A capacitor region is associated with the field effect transistor, and together they form a memory cell which is substantially surrounded by an isolating region including the thick field oxide film.

REFERENCES:
patent: 4118728 (1978-10-01), Berry
patent: 4137109 (1979-01-01), Aiken et al.

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