Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1994-07-06
1996-02-06
Ngo, Ngan
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257132, 257133, 257331, 257332, 257335, H01L 2974, H01L 31111
Patent
active
054897874
ABSTRACT:
An insulated gate field effect device (1a,1b,1c,1d) has a semiconductor body (2) with a first region (3) of one conductivity type, a second region (4) of the opposite conductivity type, a third region (6) of the one conductivity type (7) separated from the first region (3) by the second region (4) and at least one injector region (8) for injecting charge carriers of the opposite conductivity type into the first region (3). The conduction channel area (40) adjoining the insulated gate (9, 10) has first and second subsidiary areas (40 and 40b) for providing respective first and second subsidiary conduction channels. The second subsidiary area (40b) is spaced from the third region (6) and is more lowly doped than the first subsidiary conduction channel area (40a) for causing, when the injected opposite conductivity current type reaches a given value, the pn junction (40b') between the second subsidiary channel (40b ) and the second region (4) to become forward-biassed causing the bipolar transistor formed by the second subsidiary channel (40b), the second region (4) and the first region (3) to conduct to initiate with the at least one injector region (8) thyristor action which ceases upon removal of the conduction channel.
REFERENCES:
patent: 4969028 (1990-11-01), Baliga
patent: 5202750 (1993-04-01), Gough
patent: 5319221 (1994-06-01), Ueno
patent: 5321281 (1994-06-01), Yamaguchi et al.
"MOS Controlled Thyristors-A New Class of Power Devices" V. Temple, IEEE Transactions on Electron Devices vol. ED-33, No. 10, Oct. 1986.
Amaratunga Gehan A.
Udrea Florin
Biren Steven R.
Ngo Ngan
U.S. Philips Corporation
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