Semiconductor device having an insulated gate

Details Semiconductor device having an insulated gate Semiconductor device having an insulated gate

1997-03-28

1999-05-04

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257 76, 257410, H01L 310312, H01L 310256, H01L 2976, H01L 2994

Patent

active

059006480

ABSTRACT:
A semiconductor device comprises a semiconductor layer of SiC and an insulating layer thereon for insulating the SiC layer with respect to a metal plate constituting a gate and connectable to a voltage for creating a conducting surface channel at a SiC layer-insulating layer interface, wherein at least a portion of the insulating layer closest to the interface is made of a crystalline material which is substantially lattice-matched to SiC and has substantially the same coefficient of thermal expansion as SiC; and wherein the material has AlN as the only component or as a major component of an alloy with insulating properties.

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