Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-11-28
2006-11-28
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S351000, C257S390000, C257S776000
Reexamination Certificate
active
07141821
ABSTRACT:
The active layer of an n-channel TFT is formed with a channel forming region, a first impurity region, a second impurity region and a third impurity region. In this case, the concentration of the impurities in each of the impurity regions is made higher as the region is remote from the channel forming region. Further, the first impurity region is disposed so as to overlap a side wall, and the side wall is caused to function as an electrode to thereby attain a substantial gate overlap structure. By adopting the structure, a semiconductor device of high reliability can be manufactured.
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Hamatani Toshiji
Ohtani Hisashi
Yamazaki Shunpei
Coleman W. David
Costellia Jeffery L.
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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