Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Plural non-isolated transistor structures in same structure
Reexamination Certificate
2006-04-25
2009-08-04
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Plural non-isolated transistor structures in same structure
C257S745000, C257S155000, C257S928000, C310S312000
Reexamination Certificate
active
07569911
ABSTRACT:
An ohmic electrode is formed by stacking a lower Ti layer, a diffusion preventing layer, an upper Ti layers and a metallic (Au) layer on a p-type GaAs layer. The diffusion preventing layer includes tantalum (Ta) or niobium (Nb). Thus, interdiffusion of Ga and As in the p-type GaAs layer and Au in the metallic layer can be prevented, and variation in resistivity of the ohmic electrode in a high-temperature, high-humidity environment can be suppressed.
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Nakamura Hitoshi
Shiga Toshihiko
Tanimura Junji
Coleman W. David
Kim Su C
Leydig , Voit & Mayer, Ltd.
Mitsubishi Denki & Kabushiki Kaisha
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