Semiconductor device having an improved trench isolation

Details Semiconductor device having an improved trench isolation Semiconductor device having an improved trench isolation

1996-01-24

1998-08-04

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257304, 257329, 257511, 257514, 257517, H01L 2972

Patent

active

057897697

ABSTRACT:
A trench isolation structure includes a semiconductor region, a first insulation film on a top surface of the semiconductor region, a trench groove extending vertically from the first insulation film into the semiconductor region so that a bottom of the trench groove lies below an interface between the first insulation film and the semiconductor region, and an inter-layer insulator on the first insulation film and within the trench groove so that the inter-layer insulator fills up the trench groove.

REFERENCES:
patent: 3818289 (1974-06-01), Mudge et al.
patent: 4907063 (1990-03-01), Okada et al.
patent: 5306940 (1994-04-01), Yamazaki

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