Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Patent
1997-11-28
2000-03-07
Arroyo, Teresa M.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
257758, 257776, H01L 2348
Patent
active
060344369
ABSTRACT:
A semiconductor device has isolated first layer interconnects, second layer interconnects, third layer interconnects, and through-holes each connecting one of the second layer interconnects and a corresponding one of the third layer interconnects together. The through-holes extend beyond the sides of the second layer interconnects to reach the isolated first layer interconnects and rest thereon. The through-holes are formed by a single etching step using a common glass pattern. The occupied area for the interconnects and the fabrication steps thereof can be reduced.
REFERENCES:
patent: 3323198 (1967-06-01), Shortes
patent: 5034799 (1991-07-01), Tomita et al.
patent: 5204286 (1993-04-01), Doan
patent: 5264729 (1993-11-01), Rostoker et al.
patent: 5442236 (1995-08-01), Fukazawa
patent: 5710462 (1998-01-01), Mizushima
patent: 5723883 (1998-03-01), Gheewalla
patent: 5742099 (1998-04-01), Debnath et al.
patent: 5744865 (1998-04-01), Jeng et al.
patent: 5760429 (1998-06-01), Yano et al.
Arroyo Teresa M.
NEC Corporation
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