Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material containing...
Patent
1995-12-13
1999-03-30
Wallace, Valencia Martin
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material containing...
257 66, 257 67, 257 70, 257 75, 257190, 257192, 257616, H01L 2904, H01L 2976, H01L 27108, H01L 310328
Patent
active
058892923
ABSTRACT:
The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.
REFERENCES:
patent: 4598305 (1986-07-01), Chiang et al.
patent: 4994866 (1991-02-01), Awano
patent: 5162892 (1992-10-01), Hayashi et al.
patent: 5221365 (1993-06-01), Noguchi et al.
patent: 5231297 (1993-07-01), Nakayama et al.
patent: 5241193 (1993-08-01), Pfiester et al.
patent: 5241197 (1993-08-01), Murakami et al.
patent: 5241214 (1993-08-01), Herbots et al.
patent: 5250818 (1993-10-01), Saraswat et al.
patent: 5514879 (1996-05-01), Yamazaki
Gosain Dharam Pal
Hara Masaki
Sameshima Toshiyuki
Sano Naoki
Usui Setsuo
Martin Wallace Valencia
Sony Corporation
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