Semiconductor device having an improved metal interconnect struc

Details Semiconductor device having an improved metal interconnect struc Semiconductor device having an improved metal interconnect struc

1993-12-23

1995-08-15

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257762, 257767, H01L 29460

Patent

active

054422353

ABSTRACT:
A metal interconnect structure includes copper interface layers (24, 30) located between a refractory metal via plug (28), and first and second metal interconnect layers (16, 32). The copper interface layers (24, 30) are confined to the area of a via opening (22) in an insulating layer (20) overlying the first interconnect layer (16) and containing the via plug (28). The interface layers (24, 30) are subjected to an anneal to provide copper reservoirs (36, 37) in the interconnect layers (16, 32) adjacent to the interface layers (24, 30). The copper reservoirs (36, 37) continuously replenish copper depleted from the interface when an electric current is passed through the interconnect structure. A process includes the selective deposition of copper onto an exposed region (23) of the first metal interconnect layer (16), and onto the upper portion the via plug (28), followed by an anneal in forming gas to form the copper reservoirs (36, 37).

REFERENCES:
patent: 3743894 (1973-07-01), Hall et al.
patent: 4335506 (1982-06-01), Chiu et al.
patent: 4812419 (1989-03-01), Lee et al.
patent: 5202579 (1993-04-01), Fujii et al.
IBM TDB "Metallization for Shallow Junction Silicon Technology" d'Heurle et al. vol. 19 No. 8 Jan. 1977.
Tao, et al., Electromigration Characteristics of Al/W Via Contact Undo-Unidirectional and Bidirectional Current Conditions Proc. 1991 VLSI Multilevel Interconnect Conf., pp. 390-392.
Hu, et al., Electromigration in Al/W and Al(Cu)/W Interconnect Structures 1991 MRS Symposium Proceedings, 225, pp. 99-105.
Filippi, et al., The Effect of Copper Concentration on the Electromigration Lifetime of Layered Aluminum Copper Metallurgy With Tungsten Diffusion Barriers, 1992 VLSI multilevel interconnect Conf., pp. 359-365.
Tao, et al., Comparison of Electromigration Reliability of Tungsten and Aluminum Vias Under DC and the varying current stressing, 1992 IRPS Proceedings, pp. 338-343.

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