Semiconductor device having an improved low resistive contact

Details Semiconductor device having an improved low resistive contact Semiconductor device having an improved low resistive contact

1994-10-27

1995-12-12

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

257588, 257754, 257773, 257646, H01L 2348, H01L 2940

Patent

active

054752574

ABSTRACT:
The invention is a semiconductor device having a metal-semiconductor contact structure. The device includes a metal region having such a high conductivity as to serve as a contact plug. The device also includes a first semiconductor region having a first band gap and being so doped with one conductive type dopant as to exhibit a high conductivity. The device also includes a semiconductor film having a second band gap wider than the first band gap. The semiconductor film is in contact at its opposite surfaces with a part of the metal region and a part of the first semiconductor region respectively. The semiconductor film is doped with the one conductive type dopant so heavily as to suppress electrical current flow between the part of the metal region and the part of the first semiconductor region through the semiconductor film. The semiconductor film comprises amorphous silicon or poly-crystalline silicon. Alternatively, the second semiconductor film comprises non-doped amorphous silicon or non-doped poly-crystalline silicon.

REFERENCES:
patent: 4067100 (1978-01-01), Kojima et al.
patent: 4717681 (1988-01-01), Curran
patent: 4803528 (1989-02-01), Pankove
patent: 4862227 (1989-08-01), Tsuge et al.
patent: 5003365 (1991-03-01), Havemann et al.
patent: 5093711 (1992-03-01), Hirakawa
patent: 5202579 (1993-04-01), Fujii et al.
patent: 5250837 (1993-10-01), Sparks
"Spotec-A Sub-10-.mu.m.sup.2 Bipolar Transistor Structure Using Fully Self-Aligned Sidewall Polycide Base Technology", IEDM, 1991, by T. Shiba et al., pp. 16.4.1-16.4.4.

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