Semiconductor device having an improved electron transport prope

Details Semiconductor device having an improved electron transport prope Semiconductor device having an improved electron transport prope

1993-03-11

1995-05-02

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257 20, 257 22, 257 24, 257192, 257201, 257615, 257627, H01L 2712, H01L 29161, H01L 29205

Patent

active

054122325

ABSTRACT:
In a semiconductor device having quantum wire structure formed by first and second semiconductor layers, the first and the second semiconductor layers are used as quantum well and quantum barrier layers, respectively. The quantum well layer has a first conduction band having a first .GAMMA.-valley and a first L-valley. The first .GAMMA.-valley has a first .GAMMA.-valley energy level. The first L-valley has a first L-valley energy level which is not lower than the first .GAMMA.-valley energy level. The quantum barrier layer has a second conduction band having a second energy level which is higher than the first L-valley energy level. The quantum wire structure is extended towards a predetermined direction. More particularly, the predetermined direction is parallel to a crystal orientation of (100).

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Ismail, K., et al., "One-Dimensional Subbands And Mobility Modulation In GaAs/AlGaAs Quantum Wires", Applied Physics Letters, vol. 54, Mar. 1989, pp. 1130-1132.

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